Factory Lead Time  

6 Weeks

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

453.59237mg

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2V @ 1mA

Turn Off Delay Time  

5 ns

Power Dissipation (Max)  

740mW Ta

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

175mA Tj

Published  

2013

Packaging  

Bulk

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOW THRESHOLD

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

NOT APPLICABLE

Time@Peak Reflow Temperature-Max (s)  

NOT APPLICABLE

Qualification Status  

Not Qualified

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

740mW

Turn On Delay Time  

4 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

60pF @ 25V

Rise Time  

4ns

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

Fall Time (Typ)  

4 ns

Continuous Drain Current (ID)  

-250mA

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

6Ohm

Drain to Source Breakdown Voltage  

-40V

Width  

4.19mm

Length  

5.21mm

Height  

5.33mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free